High-performance, double node charge sharing tolerant storage cell design

Abstract

As device feature sizes shrink, inter-node charge sharing compromises the SEU sensitivity of hardened SRAM cells. By analyzing upset mechanisms in the unhardened cell, Quatrol, LIU, and DICE, a novel SEU hardened 14T cell is proposed. The new design is compared and analyzed in terms of area, delay,static power consumption, and sensitivity to single-event upsets, against state-of-the-art hardened cells. Due to fewer sensitive nodes prone to upsets, the proposed design exhibits superior immunity to single-event upsets compared to Quatrol, LIU, and DICE, which suits nanometer-scale radiation-hardened memories.